advanced power p-channel enhancement mode electronics corp. power mosfet fast switching characteristic bv dss -30v lower gate charge r ds(on) 80m small footprint & low profile package i d - 4a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 200801142 parameter drain-source voltage gate-source voltage continuous drain current 3 -55 to 150 linear derating factor 2 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range continuous drain current 3 -3.3 pulsed drain current 1 -20 1 AP2605GY rating -30 20 -4 0.016 rohs-compliant product advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the sot-26 package is widely used for commercial-industrial applications. g d s d d d d g s sot-26
ap2605g y electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.02 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 80 m v gs =-4.5v, i d =-3a - - 120 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-5v, i d =-4a - 6 - s i dss drain-source leakage current v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs= 20v - - 100 na q g total gate charge 2 i d =-4a - 5.5 8.8 nc q gs gate-source charge v ds =-24v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 2.6 - nc t d(on) turn-on delay time 2 v ds =-15v - 7 - ns t r rise time i d =-1a - 6 - ns t d(off) turn-off delay time r g =3.3 ? v gs =-10v - 18 - ns t f fall time r d =15 -4- ns c iss input capacitance v gs =0v - 400 640 pf c oss output capacitance v ds =-25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 30 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.6a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-4a, v gs =0v, - 21 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 156 : /w when mounted on min. copper pad. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. this product has been qualified for consumer market. applications or uses as criterial component in life support 2
ap2605g y fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 i d =-4.2a t a =25 o c 0 5 10 15 20 25 30 35 40 45 0123456789 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 0 5 10 15 20 25 30 35 40 012345678 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -5.0v -4.5v v g =-3.0v 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-4.0a v g =10v 0.5 1 1.5 2 2.5 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 55 65 75 85 95 105 357911 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -3.0 a t a =25 o c
ap2605g y fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 024681012 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds =-24v i d =-4a 10 100 1000 1 5 9 1317212529 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 1ms 10ms 100ms 1s dc t a =25 o c single pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 156 : /w t t
package outline : sot-26 millimeters symbols min nom max a 2.70 2.90 3.10 b 2.60 2.80 3.00 c 1.40 1.60 1.80 d 0.30 0.43 0.55 e 0.00 0.05 0.10 g i j l 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-26 0.37ref 0.95ref 1.90ref advanced power electronics corp. 0.12ref h 1.20ref y5xx part number : y5 d date code : xx c b l l g e j i a h 5
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